Electron Microscope

Combination of high reputation Hitachi cold field emission electron source and 300 kV accelerating voltage realises both ultrahigh resolution imaging and high sensitivity analysis. Double bi-prism holography, spatially resolved EELS and high precision parallel nanobeam electron beam diffraction open a new avenue for efficient and high precision material analysis.

The dedicated scanning transmission microscope (STEM) HD-2700, equipped with spherical aberration corrector co-developed by CEOS GmbH (Germany, managing director: Dr. Max Haider), enables dramatically expanded STEM performance suitable for advanced nano-technology research. Due to the correction of spherical aberration which has limited the performance of electron microscope, approximately 1.5 times higher resolution and 10 times higher probe current than the standard model are achieved simultaneously.

The H-7650 is a high performance digital imaging TEM featuring a fully integrated high sensitivity digital camera mounted below the film camera chamber. This allows direct imaging at beam dose rates that would be insufficient to excite a traditional fluorescent screen imaging system, ensuring that there is the minimum of beam damage to sensitive samples. The H-7650 features single computer operation and a single display monitor. A comprehensive image processing and image data management system is also provided.

High-throughput high-resolution electron microscopy.

This is a sample rotation holder commonly usable for FIB and STEM in order to observe a micro-sample processed in the shape of a pillar with an FIB system. It is effectively usable for 3-dimensional structural evaluation of electronic devices under miniaturisation and for stereoscopic failure analysis.

It can be checked to which wiring of CAD data an LSI pattern under observation with an FIB system corresponds. When coordinates in CAD data are specified, the sample stage of the system moves to the coordinates through interlink and a SIM image at the corresponding location is displayed. Also, CAD data and SIM image can be overlaid (overlay display). Therefore, condition of the lower-layer wiring can be easily checked and a substantial increase in the efficiency of analysis and repair work can be expected.

(S)TEM/SEM specimen can be prepared with rapidity and accuracy.

This device is used for cutting out the desired wafer part for analysis with STEM, TEM, etc. by ion beam in the vacuum chamber of FIB system and taking it out with a manipulator. Positional accuracy in sample preparation can be enhanced and preparation time can be shortened to about half an hour. (Already patented in Japan and U.S.A.)

Model SU-70 is a new concept SEM incorporating field proven Hitachi’s semi-in-lens technology for ultra high resolution, and Schottky electron gun. It features not only ultra high resolution (1.0 nm/15kV, 1.6nm*/l kV), but also observation of charge-up reduced image, compositional contrast image, ultra-low accelerating voltage image*, benefiting from highly-reputed Super ExB function. The Schottky electron gun enables to deal with wide variety of analytical work (EDX*, WDX*, EBSP*, etc) thanks to its 100 nA probe current. (*option)

It utilises advanced Variable Pressure (VP) technology and allows accommodation of EDX, WDX and EBSP system for versatile material analyses in addition to high resolution imaging and materials characterisation. The VP mode allows the operator to change vacuum conditions in the sample chamber from high vacuum to low vacuum.

Like no other SEM in the world...

In spite of semi-in-lens SEM, in-lens SEM equivalent specification has been realized.

Hitachi, pioneer of the semi-in-lens FE-SEM, is proud to introduce a new signal detection system. Secondary and Backscattered electron signal collection efficiency and flexibility to mix and filter signals have been greatly improved by New Top detector, especially at low and ultra low voltages.

The Analytical SEM for Studying Large, Heavy & Tall Samples.

A yet more user-friendly SEM through newly developed electron optics and Automatic functions.

Compact & High-performance.

Measure a single MOS transistor characteristics, by directly touching down probes on cotact plug of LSI device.

A nano-probing/ fault localisation imaging tool to visualise underlying interconnect failure position in LSI device by EBAC (Electron Beam Absorbed Current)/ EBIC (Electron Beam Induced Current) imaging.

Effective for removal of sample surface layer and the final finish after mechanical polish.

This unit supplies accurately temperature controlled water to the SEM, FIB, etc. Because water is circulated, its consumption is minimum, so running cost can be reduced. This unit is suited mainly for cooling an oil diffusion pump (DP). W-5030 can be started and stopped in synchronisation with SEM.
Thus, the operator will be relieved from coolant operation. After cooling, this unit can be automatically stopped.

In response to pergormance upgrading of FE-SEM, accurately temperature controlled water is supplied for cooling the electron lenses. Because water is circulated, its consumption is minimum, so running cost can be reduced. This unit can be started and stopped in synchronisation with SEM. Thus, the operator is relieved from coolant operation.

Sample heating and damage are minimised using ring electrodes, floating sample stage, etc. A carbon coating accessory (option) is also prepared.

Mirror finished Cross-Section of various samples can be obtained.

Capable of minimising the sample damage and coating a sample with ultra flat particles due to adaptation of magnetron electrodes. Applicable to high resolution SEMs.